公开(公告)号：US08906778B2

公开(公告)日：2014-12-09

申请号：US13163378

申请日：2011-06-17

申请人： YewChung Sermon Wu ,  Bau-Ming Wang ,  Feng-Ching Hsiao

发明人： YewChung Sermon Wu ,  Bau-Ming Wang ,  Feng-Ching Hsiao

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/02 ,  H01L21/18 ,  H01L33/00

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/187 ,  H01L33/0079

摘要： The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.

摘要翻译： 本发明涉及一种制造半导体的方法，包括以下步骤：提供生长衬底; 在生长衬底上形成半导体衬底; 形成具有多个凹槽的第一结构，并且在所述生长衬底和所述半导体衬底之间; 并且改变生长衬底和半导体衬底的温度。

公开(公告)号：US20120231614A1

公开(公告)日：2012-09-13

申请号：US13163378

申请日：2011-06-17

申请人： YewChung Sermon Wu ,  Bau-Ming Wang ,  Feng-Ching Hsiao

发明人： YewChung Sermon Wu ,  Bau-Ming Wang ,  Feng-Ching Hsiao

IPC分类号： H01L21/20 ,  H01L21/26

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/187 ,  H01L33/0079

摘要： The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.

摘要翻译： 本发明涉及一种制造半导体的方法，包括以下步骤：提供生长衬底; 在生长衬底上形成半导体衬底; 形成具有多个凹槽的第一结构，并且在所述生长衬底和所述半导体衬底之间; 并改变生长衬底和半导体衬底的温度。