- Patent Title: Photomask and thin-film transistor fabricated using the photomask
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Application No.: US14170603Application Date: 2014-02-01
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Publication No.: US08907345B2Publication Date: 2014-12-09
- Inventor: Yeon-Ju Kim , Sung-Jae Moon , Yun-Jung Cho , Bum-Ki Baek , Kwang-Hoon Lee , Byoung-Sun Na , Sung-Hoon Yang , Yoon-Jang Kim , Eun Cho
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2009-0131175 20091224
- Main IPC: H01L33/20
- IPC: H01L33/20 ; G03F1/38 ; G03F1/00 ; G03F1/36 ; H01L29/417

Abstract:
A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.
Public/Granted literature
- US20140147774A1 PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK Public/Granted day:2014-05-29
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