发明授权
- 专利标题： Dual gate oxide trench MOSFET with channel stop trench
- 专利标题（中）： 双栅极氧化沟槽MOSFET，具有通道停止沟槽
-
申请号： US13780579申请日： 2013-02-28
-
公开(公告)号： US08907416B2公开(公告)日： 2014-12-09
- 发明人: Sung-Shan Tai , Sik Lui , Xiaobin Wang
- 申请人： Sung-Shan Tai , Sik Lui , Xiaobin Wang
- 申请人地址： US CA Sunnyvale
- 专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： JDI Patent
- 代理商 Joshua D. Isenberg
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L29/40 ; H01L29/06 ; H01L29/08 ; H01L29/417 ; H01L29/423 ; H01L29/45
摘要：
A semiconductor device and fabrication methods are disclosed. The device includes a plurality of gate electrodes formed in trenches located in an active region of a semiconductor substrate. A first gate runner is formed in the substrate and electrically connected to the gate electrodes, wherein the first gate runner surrounds the active region. A second gate runner is connected to the first gate runner and located between the active region and a termination region. A termination structure surrounds the first and second gate runners and the active region. The termination structure includes a conductive material in an insulator-lined trench in the substrate, wherein the termination structure is electrically shorted to a source or body layer of the substrate thereby forming a channel stop for the device.
公开/授权文献
- US20130175612A1 DUAL GATE OXIDE TRENCH MOSFET WITH CHANNEL STOP TRENCH 公开/授权日：2013-07-11