发明授权
- 专利标题： Field emission electron source and field emission device using the same
- 专利标题（中）： 场致发射电子源和场致发射装置使用
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申请号： US13592795申请日： 2012-08-23
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公开(公告)号： US08907555B2公开(公告)日： 2014-12-09
- 发明人: Yang Wei , Shou-Shan Fan
- 申请人： Yang Wei , Shou-Shan Fan
- 申请人地址： CN Beijing TW New Taipei
- 专利权人： Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人： Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址： CN Beijing TW New Taipei
- 代理机构： Novak Druce Connolly Bove + Quigg LLP
- 优先权： CN201210042270 20120223
- 主分类号： H01J19/24
- IPC分类号： H01J19/24 ; H01J19/06
摘要：
A field emission electron source includes a carbon nanotube micro-tip structure. The carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate. A field emission device is also disclosed.
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