Invention Grant
US08910591B2 Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
有权
半导体晶片电容耦合等离子体蒸汽处理的装置和方法
- Patent Title: Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
- Patent Title (中): 半导体晶片电容耦合等离子体蒸汽处理的装置和方法
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Application No.: US13767526Application Date: 2013-02-14
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Publication No.: US08910591B2Publication Date: 2014-12-16
- Inventor: Mark Kiehlbauch
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00 ; H01J1/13 ; H01J37/32 ; H01L21/67
Abstract:
A capacitively coupled plasma reactor comprising a processing chamber, a first electrode, a second electrode and a thermoelectric unit. The processing chamber has an upper portion with a gas inlet and a lower portion, and the upper portion is in fluid communication with the lower portion. The first electrode has a front side and a backside and is positioned at the upper portion of the processing chamber. The second electrode is positioned in the lower portion of the processing chamber and is spaced apart from the front side of the first electrode. The thermoelectric unit is positioned proximate to the backside of the first electrode and is capable of heating and cooling the first electrode.
Public/Granted literature
- US20130154479A1 APPARATUS AND METHODS FOR CAPACITIVELY COUPLED PLASMA VAPOR PROCESSING OF SEMICONDUCTOR WAFERS Public/Granted day:2013-06-20
Information query
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