发明授权
- 专利标题： 3D transmission lines for semiconductors
- 专利标题（中）： 用于半导体的3D传输线
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申请号： US13415906申请日： 2012-03-09
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公开(公告)号： US08912581B2公开(公告)日： 2014-12-16
- 发明人: Yu-Ling Lin , Hsiao-Tsung Yen , Feng Wei Kuo , Ho-Hsiang Chen , Chin-Wei Kuo
- 申请人： Yu-Ling Lin , Hsiao-Tsung Yen , Feng Wei Kuo , Ho-Hsiang Chen , Chin-Wei Kuo
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L39/00 ; H01L29/40 ; H01L23/60
摘要：
A transmission line structure for semiconductor RF and wireless circuits, and method for forming the same. The transmission line structure includes embodiments having a first die including a first substrate, a first insulating layer, and a ground plane, and a second die including a second substrate, a second insulating layer, and a signal transmission line. The second die may be positioned above and spaced apart from the first die. An underfill is disposed between the ground plane of the first die and the signal transmission line of the second die. Collectively, the ground plane and transmission line of the first and second die and underfill forms a compact transmission line structure. In some embodiments, the transmission line structure may be used for microwave applications.
公开/授权文献
- US20130234305A1 3D TRANSMISSION LINES FOR SEMICONDUCTORS 公开/授权日：2013-09-12
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