发明授权
- 专利标题： Trench MOS structure and method for forming the same
- 专利标题（中）： 沟槽MOS结构及其形成方法
-
申请号： US13106852申请日： 2011-05-12
-
公开(公告)号： US08912595B2公开(公告)日： 2014-12-16
- 发明人: Chin-Te Kuo , Yi-Nan Chen , Hsien-Wen Liu
- 申请人： Chin-Te Kuo , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L21/308
摘要：
A trench MOS structure is disclosed. The trench MOS structure includes a substrate, an epitaxial layer, a doping well, a doping region and a trench gate. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. The trench gate is partially disposed in the doping region. The trench gate has a bottle shaped profile with a top section smaller than a bottom section, both are partially disposed in the doping well. The bottom section of two adjacent trench gates results in a higher electrical field around the trench MOS structures.
公开/授权文献
- US20120286353A1 TRENCH MOS STRUCTURE AND METHOD FOR FORMING THE SAME 公开/授权日：2012-11-15
信息查询
IPC分类:
