发明授权
US08913350B2 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
有权
通过覆盖层诱导垂直各向异性和使用这种磁性元件的存储器来提供具有改进性能的磁性隧道接合元件的方法和系统
- 专利标题： Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
- 专利标题（中）： 通过覆盖层诱导垂直各向异性和使用这种磁性元件的存储器来提供具有改进性能的磁性隧道接合元件的方法和系统
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申请号： US12538489申请日： 2009-08-10
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公开(公告)号： US08913350B2公开(公告)日： 2014-12-16
- 发明人: Steven M. Watts , Zhitao Diao , Xueti Tang
- 申请人： Steven M. Watts , Zhitao Diao , Xueti Tang
- 申请人地址： US CA San Jose
- 专利权人： Grandis, Inc.
- 当前专利权人： Grandis, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Convergent Law Group LLP
- 主分类号： G11B5/33
- IPC分类号： G11B5/33 ; B82Y40/00 ; G11C11/16 ; H01L43/08 ; G01R33/09 ; B82Y25/00 ; H01F41/30 ; H01F10/32 ; H01F41/34
摘要：
A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
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