发明授权
- 专利标题： Semiconductor devices having backside illuminated image sensors
- 专利标题（中）： 具有背面照明图像传感器的半导体器件
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申请号： US13180898申请日： 2011-07-12
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公开(公告)号： US08916911B2公开(公告)日： 2014-12-23
- 发明人: Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
- 申请人： Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0099823 20101013
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L27/146 ; H04N5/225
摘要：
A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.