发明授权
US08923039B2 Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction
有权
基于纳米线磁隧道结中的电流诱导畴壁运动的多位非易失性存储器
- 专利标题： Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction
- 专利标题（中）： 基于纳米线磁隧道结中的电流诱导畴壁运动的多位非易失性存储器
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申请号： US13670064申请日： 2012-11-06
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公开(公告)号： US08923039B2公开(公告)日： 2014-12-30
- 发明人: Anthony J. Annunziata , Michael C. Gaidis , William Gallagher , Luc Thomas
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A mechanism is provided for storing multiple bits in a domain wall nanowire magnetic junction device. The multiple bits are encoded based on a resistance of the domain wall nanowire magnetic junction device using a single domain wall. The single domain wall is shifted to change the resistance of the domain wall nanowire magnetic junction device to encode a selected bit. The resistance is checked to ensure that it corresponds to a preselected resistance for the selected bit. Responsive to the resistance corresponding to the preselected resistance for the selected bit, the selected bit is stored. Responsive to the resistance not being the preselected resistance for the selected bit, the single domain wall is shifted until the resistance corresponds to the preselected resistance.