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Invention Grant
US08927995B2 Thin film transistor with anti-diffusion area that prevents metal atoms and/or ions from source/drain electrodes from shortening the channel length and display substrate having the thin film transistor 有权
具有防扩散区域的薄膜晶体管，其防止源极/漏极的金属原子和/或离子缩短沟道长度，并且具有薄膜晶体管的显示衬底

Thin film transistor with anti-diffusion area that prevents metal atoms and/or ions from source/drain electrodes from shortening the channel length and display substrate having the thin film transistor
Abstract:
A thin film transistor includes a semiconductor pattern disposed on a substrate and a semiconductor pattern portion with a conductive or nonconductive characteristic, and a anti-diffusion portion on a side of the semiconductor pattern portion to prevent metal ions from being diffused along the semiconductor pattern portion. A first insulating layer covers the semiconductor pattern and has a first contact hole exposing a first region of the semiconductor pattern portion and a second contact hole exposing a second region of the semiconductor pattern portion. A gate electrode is disposed on the first insulating layer. A second insulating layer covers the gate electrode and has a third contact hole exposing the first region and a fourth contact hole exposing the second region. A source electrode is formed on the second insulating layer and connected to the first region, and a drain electrode is formed on the second insulating layer and connected to the second region.
Abstract(Chinese):

薄膜晶体管包括设置在基板上的半导体图案和具有导电或非导电特性的半导体图案部分，以及在半导体图案部分侧的防扩散部分，以防止金属离子沿着半导体图案部分扩散 。 第一绝缘层覆盖半导体图案，并且具有暴露半导体图案部分的第一区域的第一接触孔和暴露半导体图案部分的第二区域的第二接触孔。 栅电极设置在第一绝缘层上。 第二绝缘层覆盖栅电极，并具有暴露第一区域的第三接触孔和暴露第二区域的第四接触孔。 源极电极形成在第二绝缘层上并与第一区域连接，漏电极形成在第二绝缘层上并连接到第二区域。

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