Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US14075519Application Date: 2013-11-08
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Publication No.: US08928027B2Publication Date: 2015-01-06
- Inventor: Yung Ho Ryu , Hae Yeon Hwang , Young Chul Shin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2010-0107809 20101101
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L33/38 ; H01L33/20 ; H01L27/15 ; H01L33/08 ; H01L33/42 ; H01L33/44

Abstract:
A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.
Public/Granted literature
- US20140061713A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2014-03-06
Information query
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