公开(公告)号：US08828761B2

公开(公告)日：2014-09-09

申请号：US13801903

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。

公开(公告)号：US08928027B2

公开(公告)日：2015-01-06

申请号：US14075519

申请日：2013-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yung Ho Ryu ,  Hae Yeon Hwang ,  Young Chul Shin

IPC: H01L29/22 ,  H01L33/38 ,  H01L33/20 ,  H01L27/15 ,  H01L33/08 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

Abstract translation: 一种半导体发光器件包括：包括第一和第二区域的第一导电半导体层; 设置在所述第二区域上的有源层; 设置在所述有源层上的第二导电半导体层; 分别设置在第一和第二导电半导体层上的第一和第二电极分支; 电连接到所述第一电极分支并设置在所述第一电极分支上的第一电极焊盘; 以及电连接到第二电极分支并设置在第二电极分支上的第二电极焊盘。

公开(公告)号：US09450151B2

公开(公告)日：2016-09-20

申请号：US14717942

申请日：2015-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pun Jae Choi ,  Young Soo Park ,  Yung Ho Ryu ,  Tae Young Park ,  Jin Gi Hong

IPC: H01L21/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.

Abstract translation: 半导体发光器件包括具有彼此相对的第一表面和第二表面的层压半导体结构，分别形成第一表面和第二表面的第一导电类型半导体层和第二导电型半导体层， 活动层 第一和第二电极分别设置在叠层半导体结构的第一表面和层叠半导体结构的第二表面上。 连接电极延伸到要连接到第二电极的第一表面。 支撑基板设置在第二电极上，绝缘层使连接电极与有源层和第一导电型半导体层绝缘。

公开(公告)号：US09087932B2

公开(公告)日：2015-07-21

申请号：US13948797

申请日：2013-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun Kim ,  Sung Joon Kim ,  Yong Il Kim ,  Yung Ho Ryu ,  Myeong Rak Son ,  Su Yeol Lee ,  Seung Hwan Lee ,  Tae Sung Jang ,  Su Min Hwangbo

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。

公开(公告)号：US09676047B2

公开(公告)日：2017-06-13

申请号：US14569402

申请日：2014-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yung Ho Ryu ,  Seung Woo Choi ,  Tae Hun Kim ,  Gyeong Seon Park ,  Jong Hoon Lim ,  Sung Joon Kim ,  Myong Soo Cho

IPC: H01L33/62 ,  B23K1/20 ,  B23K1/00 ,  B23K35/26 ,  B23K35/28 ,  B23K35/30 ,  B23K35/32 ,  B23K35/02 ,  H01L23/00 ,  H01L33/00 ,  B23K20/02 ,  B23K20/16 ,  B23K20/233 ,  B23K101/40 ,  B23K101/42

CPC classification number: B23K1/0016 ,  B23K1/20 ,  B23K20/026 ,  B23K20/16 ,  B23K20/233 ,  B23K35/0238 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/262 ,  B23K35/264 ,  B23K35/268 ,  B23K35/282 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/3033 ,  B23K35/3046 ,  B23K35/32 ,  B23K35/322 ,  B23K2101/40 ,  B23K2101/42 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/83193 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

公开(公告)号：US20130244356A1

公开(公告)日：2013-09-19

申请号：US13801903

申请日：2013-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

IPC: H01L33/00 ,  H01L33/60

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。