发明授权
- 专利标题： Semiconductor structure and method for forming the same
- 专利标题（中）： 半导体结构及其形成方法
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申请号： US13201827申请日： 2011-02-24
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公开(公告)号： US08928089B2公开(公告)日： 2015-01-06
- 发明人: Huilong Zhu , Zhijiong Luo , Haizhou Yin
- 申请人： Huilong Zhu , Zhijiong Luo , Haizhou Yin
- 申请人地址： CN Beijing
- 专利权人： Institute of Microelectronics Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics Chinese Academy of Sciences
- 当前专利权人地址： CN Beijing
- 代理机构： Goodwin Procter LLP
- 优先权： CN201010185025 20100520
- 国际申请： PCT/CN2011/071249 WO 20110224
- 国际公布： WO2011/143961 WO 20111124
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/8238 ; H01L29/78
摘要：
A semiconductor structure and a method for forming the same are provided. The structure comprises a semiconductor substrate (100) with an nMOSFET region (102) and a pMOSFET region (104) on it. An nMOSFET structure and a pMOSFET structure are formed in the nMOSFET region (102) and the pMOSFET region (104), respectively. The nMOSFET structure comprises a first channel region (182) formed in the nMOSFET region (102) and a first gate stack formed in the first channel region (182). The nMOSFET structure is covered with a compressive-stressed material layer (130) to apply a tensile stress to the first channel region (182). The pMOSFET structure comprises a second channel region (184) formed in the pMOSFET region (104) and a second gate stack formed in the second channel region (184). The pMOSFET structure is covered with a tensile-stressed material layer (140) to apply a compressive stress to the second channel region (184).
公开/授权文献
- US20110316088A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 公开/授权日：2011-12-29
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