Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13253791Application Date: 2011-10-05
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Publication No.: US08928101B2Publication Date: 2015-01-06
- Inventor: Hiroki Kasai , Yasuo Arai , Takaki Hatsui
- Applicant: Hiroki Kasai , Yasuo Arai , Takaki Hatsui
- Applicant Address: JP Yokohama JP Saitama
- Assignee: LAPIS Semiconductor Co., Ltd.,RIKEN
- Current Assignee: LAPIS Semiconductor Co., Ltd.,RIKEN
- Current Assignee Address: JP Yokohama JP Saitama
- Agency: Studebaker & Brackett PC
- Priority: JP2010-226717 20101006
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L27/146 ; H01L27/12

Abstract:
A semiconductor device includes: a first semiconductor layer of a first conductivity type; an insulation layer on the first semiconductor layer; a second semiconductor layer in the insulation layer; an active element in the second semiconductor layer; a first semiconductor region on the first semiconductor layer and of a second conductivity type; a second semiconductor region in the first semiconductor region and of the second conductivity type with a higher impurity concentration than the first semiconductor region; a first conductor in a through hole in the insulation layer and connected to the second semiconductor region; a second conductor above or within the insulation layer, the second conductor surrounding the first conductor such that an outside edge thereof is outside the second semiconductor region; a third conductor connecting the first and second conductors; and a fourth conductor connected to the first semiconductor layer.
Public/Granted literature
- US20120086079A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-04-12
Information query
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