Invention Grant
US08928151B2 Hybrid core through holes and vias 有权
混合核心通孔和通孔

Hybrid core through holes and vias
Abstract:
A semiconductor device substrate includes a front section and back section that are laminated cores disposed on a front- and back surfaces of a first core. The first core has a cylindrical plated through hole that has been metal plated and filled with air-core material. The front- and back sections have laser-drilled tapered vias that are filled with conductive material and that are coupled to the plated through hole. The back section includes an integral inductor coil that communicates to the front section. The first core and the laminated-cores form a hybrid-core semiconductor device substrate with an integral inductor coil.
Public/Granted literature
Information query
Patent Agency Ranking
0/0