Invention Grant
- Patent Title: Hybrid core through holes and vias
- Patent Title (中): 混合核心通孔和通孔
-
Application No.: US14019759Application Date: 2013-09-06
-
Publication No.: US08928151B2Publication Date: 2015-01-06
- Inventor: Mihir K. Roy , Islam Salama , Yonggang Li
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498

Abstract:
A semiconductor device substrate includes a front section and back section that are laminated cores disposed on a front- and back surfaces of a first core. The first core has a cylindrical plated through hole that has been metal plated and filled with air-core material. The front- and back sections have laser-drilled tapered vias that are filled with conductive material and that are coupled to the plated through hole. The back section includes an integral inductor coil that communicates to the front section. The first core and the laminated-cores form a hybrid-core semiconductor device substrate with an integral inductor coil.
Public/Granted literature
- US20140008760A1 HYBRID-CORE THROUGH HOLES AND VIAS Public/Granted day:2014-01-09
Information query
IPC分类: