发明授权
US08932926B2 Method for forming gate oxide film of sic semiconductor device using two step oxidation process
有权
使用两步氧化工艺形成半导体器件的栅极氧化膜的方法
- 专利标题： Method for forming gate oxide film of sic semiconductor device using two step oxidation process
- 专利标题（中）： 使用两步氧化工艺形成半导体器件的栅极氧化膜的方法
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申请号： US12554369申请日： 2009-09-04
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公开(公告)号： US08932926B2公开(公告)日： 2015-01-13
- 发明人: Hiroshi Kono , Takuma Suzuki
- 申请人： Hiroshi Kono , Takuma Suzuki
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku, Tokyo
- 代理机构： Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- 优先权： JP2008-249164 20080926
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/04 ; H01L29/16 ; H01L29/66
摘要：
A method for manufacturing a semiconductor device, includes forming a gate oxide film on an SiC region by a first thermal oxidation treatment in a first oxidizing atmosphere, performing a second thermal oxidation treatment at an oxidation speed of at most 5 nm/hour in a second oxidizing atmosphere having a lower oxygen concentration than the first oxidizing atmosphere, to increase film thickness of the gate oxide film, after the first thermal oxidation treatment, and forming a gate electrode on the gate oxide film with the increased film thickness.
公开/授权文献
- US20100081243A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2010-04-01
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