Invention Grant
US08933429B2 Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array
有权
在隧道状态下使用多层MIMCAP作为横杆存储器阵列的选择器元件
- Patent Title: Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array
- Patent Title (中): 在隧道状态下使用多层MIMCAP作为横杆存储器阵列的选择器元件
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Application No.: US13974278Application Date: 2013-08-23
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Publication No.: US08933429B2Publication Date: 2015-01-13
- Inventor: Venkat Ananthan , Prashant B Phatak
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; G11C13/00 ; H01L21/66

Abstract:
Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a low band gap dielectric layer disposed between two higher band gap dielectric layers. The high band gap dielectric layers can be doped with doping materials to form traps at energy levels higher than the operating voltage of the memory device.
Public/Granted literature
- US20140264239A1 Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array Public/Granted day:2014-09-18
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