发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
-
申请号： US14074212申请日： 2013-11-07
-
公开(公告)号： US08933483B2公开(公告)日： 2015-01-13
- 发明人: Hidefumi Takaya , Kimimori Hamada , Yuji Nishibe
- 申请人： Hidefumi Takaya , Kimimori Hamada , Yuji Nishibe
- 申请人地址： JP Toyota-Shi
- 专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人地址： JP Toyota-Shi
- 代理机构： Kenyon & Kenyon LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/06
摘要：
Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: [ ∑ i = 1 n ( R Mi × k Mi ) - ∑ i = 1 n ( R Si × k Si ) ] / ∑ i = 1 n ( R Mi × k Mi ) where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the i-th semiconductor layer of the sense element domain is RSi; and a resistance ratio of the i-th semiconductor layer of the sense element domain to the entire sense element domain is kSi.
公开/授权文献
- US20140054688A1 SEMICONDUCTOR DEVICE 公开/授权日：2014-02-27
信息查询
IPC分类:
