Invention Grant
US08934284B2 Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory
有权
使用传递函数来预测基于电阻的存储器的电阻偏移和/或噪声的方法和装置
- Patent Title: Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory
- Patent Title (中): 使用传递函数来预测基于电阻的存储器的电阻偏移和/或噪声的方法和装置
-
Application No.: US13776886Application Date: 2013-02-26
-
Publication No.: US08934284B2Publication Date: 2015-01-13
- Inventor: Ara Patapoutian , Ryan James Goss , Antoine Khoueir
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/56 ; G11C13/00
Abstract:
Two or more workload indicators affecting a memory cell of a resistance-based, non-volatile memory are measured. The two or more workload indicators are applied to a transfer function that predicts a resistance shift and/or resistance noise variance in response to the two or more workload indicators. A result of the transfer function is applied to shift and/or determine a threshold resistance used for at least one of a program operation and a read operation affecting the memory cell. An error rate of the memory cell is reduced as a result.
Public/Granted literature
Information query
