Invention Grant
US08937836B2 Line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same
有权
用于非易失性存储器件和存储器件的线路升压系统和方法以及使用它的基于处理器的系统
- Patent Title: Line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same
- Patent Title (中): 用于非易失性存储器件和存储器件的线路升压系统和方法以及使用它的基于处理器的系统
-
Application No.: US14223734Application Date: 2014-03-24
-
Publication No.: US08937836B2Publication Date: 2015-01-20
- Inventor: Violante Moschiano , Giovanni Santin , Ercole Di Iorio
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/12 ; G11C5/14 ; G11C16/08
Abstract:
The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
Public/Granted literature
Information query
