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1.发明授权Line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same 有权用于非易失性存储器件和存储器件的线路升压系统和方法以及使用它的基于处理器的系统公开(公告)号：US08937836B2
公开(公告)日：2015-01-20
申请号：US14223734
申请日：2014-03-24
Applicant: Micron Technology, Inc.
Inventor： Violante Moschiano , Giovanni Santin , Ercole Di Iorio
Abstract: The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
Abstract translation: 所选择的字线的电压通过从相邻字线电容耦合到所选字线的电压而增加到相应的串驱动晶体管能够驱动字线的电压。 在将编程电压施加到所选字线的串驱动晶体管之后，并且在将串驱动器电压施加到所有字的栅极之后，通过增加相邻字线的电压来将电压电容耦合到所选择的字线 的阵列驱动晶体管。
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2.发明申请LINE VOLTAGE BOOST SYSTEM AND METHOD FOR NON-VOLATILE MEMORY DEVICES AND MEMORY DEVICES AND PROCESSOR-BASED SYSTEM USING SAME 有权用于非易失性存储器件和存储器件的线路电压升压系统和方法以及使用其的基于处理器的系统公开(公告)号：US20140204674A1
公开(公告)日：2014-07-24
申请号：US14223734
申请日：2014-03-24
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Violante Moschiano , Giovanni Santin , Ercole Di Iorio
IPC: G11C16/12
Abstract: The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
Abstract translation: 所选择的字线的电压通过从相邻字线电容耦合到所选字线的电压而增加到相应的串驱动晶体管能够驱动字线的电压。 在将编程电压施加到所选字线的串驱动晶体管之后，并且在将串驱动器电压施加到所有字的栅极之后，通过增加相邻字线的电压来将电压电容耦合到所选择的字线 的阵列驱动晶体管。
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