Invention Grant
- Patent Title: Through hole vias at saw streets including protrusions or recesses for interconnection
- Patent Title (中): 通道通道，包括用于互连的突起或凹槽
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Application No.: US13273537Application Date: 2011-10-14
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Publication No.: US08940636B2Publication Date: 2015-01-27
- Inventor: Reza A. Pagaila , Zigmund R. Camacho , Lionel Chien Hui Tay , Byung Tai Do
- Applicant: Reza A. Pagaila , Zigmund R. Camacho , Lionel Chien Hui Tay , Byung Tai Do
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltc.
- Current Assignee: STATS ChipPAC, Ltc.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/683 ; H01L21/56 ; H01L23/31 ; H01L23/538 ; H01L23/00 ; H01L25/065 ; H01L25/10 ; H01L25/00
Abstract:
A semiconductor package includes a semiconductor wafer having a plurality of semiconductor die. A contact pad is formed over and electrically connected to an active surface of the semiconductor die. A gap is formed between the semiconductor die. An insulating material is deposited in the gap between the semiconductor die. An adhesive layer is formed over a surface of the semiconductor die and the insulating material. A via is formed in the insulating material and the adhesive layer. A conductive material is deposited in the via to form a through hole via (THV). A conductive layer is formed over the contact pad and the THV to electrically connect the contact pad and the THV. The plurality of semiconductor die is singulated. The insulating material can include an organic material. The active surface of the semiconductor die can include an optical device.
Public/Granted literature
- US20120034777A1 Through Hole Vias at Saw Streets Including Protrusions or Recesses for Interconnection Public/Granted day:2012-02-09
Information query
IPC分类:
