Invention Grant
- Patent Title: FinFETs with different fin heights
- Patent Title (中): FinFET具有不同的翅片高度
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Application No.: US12871655Application Date: 2010-08-30
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Publication No.: US08941153B2Publication Date: 2015-01-27
- Inventor: Tsung-Lin Lee , Chih Chieh Yeh , Chang-Yun Chang , Feng Yuan
- Applicant: Tsung-Lin Lee , Chih Chieh Yeh , Chang-Yun Chang , Feng Yuan
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/8234 ; H01L27/088 ; H01L29/66
Abstract:
An integrated circuit structure includes a semiconductor substrate including a first portion in a first device region, and a second portion in a second device region. A first semiconductor fin is over the semiconductor substrate and has a first fin height. A second semiconductor fin is over the semiconductor substrate and has a second fin height. The first fin height is greater than the second fin height.
Public/Granted literature
- US20110121406A1 FinFETs with Different Fin Heights Public/Granted day:2011-05-26
Information query
IPC分类:
