发明授权
- 专利标题： FinFETs with different fin heights
- 专利标题（中）： FinFET具有不同的翅片高度
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申请号： US12871655申请日： 2010-08-30
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公开(公告)号： US08941153B2公开(公告)日： 2015-01-27
- 发明人: Tsung-Lin Lee , Chih Chieh Yeh , Chang-Yun Chang , Feng Yuan
- 申请人： Tsung-Lin Lee , Chih Chieh Yeh , Chang-Yun Chang , Feng Yuan
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/8234 ; H01L27/088 ; H01L29/66
摘要：
An integrated circuit structure includes a semiconductor substrate including a first portion in a first device region, and a second portion in a second device region. A first semiconductor fin is over the semiconductor substrate and has a first fin height. A second semiconductor fin is over the semiconductor substrate and has a second fin height. The first fin height is greater than the second fin height.
公开/授权文献
- US20110121406A1 FinFETs with Different Fin Heights 公开/授权日：2011-05-26
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