- 专利标题: Semiconductor devices having different gate oxide thicknesses
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申请号: US13534012申请日: 2012-06-27
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公开(公告)号: US08941177B2公开(公告)日: 2015-01-27
- 发明人: Charlotte DeWan Adams , Michael P. Chudzik , Siddarth A. Krishnan , Unoh Kwon , Shahab Siddiqui
- 申请人: Charlotte DeWan Adams , Michael P. Chudzik , Siddarth A. Krishnan , Unoh Kwon , Shahab Siddiqui
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 L. Jeffrey Kelly; H. Daniel Schnurmann
- 主分类号: H01L29/36
- IPC分类号: H01L29/36 ; H01L29/66
摘要:
A method of manufacturing multiple finFET devices having different thickness gate oxides. The method may include depositing a first dielectric layer on top of the semiconductor substrate, on top of a first fin, and on top of a second fin; forming a first dummy gate stack; forming a second dummy gate stack; removing the first and second dummy gates selective to the first and second gate oxides; masking a portion of the semiconductor structure comprising the second fin, and removing the first gate oxide from atop the first fin; and depositing a second dielectric layer within the first opening, and within the second opening, the second dielectric layer being located on top of the first fin and adjacent to the exposed sidewalls of the first pair of dielectric spacers, and on top of the second gate oxide and adjacent to the exposed sidewalls of the second pair of dielectric spacers.
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