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    SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES
    2.
    发明申请
    SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES 有权
    具有不同栅极氧化物厚度的半导体器件

    公开(公告)号：US20140001575A1

    公开(公告)日：2014-01-02

    申请号：US13534012

    申请日：2012-06-27

    申请人： Charlotte DeWan Adams ,  Michael P. Chudzik ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Shahab Siddiqui

    发明人： Charlotte DeWan Adams ,  Michael P. Chudzik ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Shahab Siddiqui

    IPC分类号： H01L21/336 ,  H01L29/78

    CPC分类号： H01L27/0886 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/42364 ,  H01L29/66545 ,  H01L29/66795

    摘要： A method of manufacturing multiple finFET devices having different thickness gate oxides. The method may include depositing a first dielectric layer on top of the semiconductor substrate, on top of a first fin, and on top of a second fin; forming a first dummy gate stack; forming a second dummy gate stack; removing the first and second dummy gates selective to the first and second gate oxides; masking a portion of the semiconductor structure comprising the second fin, and removing the first gate oxide from atop the first fin; and depositing a second dielectric layer within the first opening, and within the second opening, the second dielectric layer being located on top of the first fin and adjacent to the exposed sidewalls of the first pair of dielectric spacers, and on top of the second gate oxide and adjacent to the exposed sidewalls of the second pair of dielectric spacers.

    摘要翻译： 制造具有不同厚度栅极氧化物的多个finFET器件的方法。 该方法可以包括在半导体衬底的顶部上，在第一鳍的顶部上并在第二鳍的顶部上沉积第一介电层; 形成第一虚拟栅极堆叠; 形成第二虚拟栅极叠层; 去除对第一和第二栅极氧化物选择性的第一和第二伪栅极; 掩蔽包括第二鳍片的半导体结构的一部分，并且从第一鳍片顶部去除第一栅极氧化物; 以及在所述第一开口内沉积第二电介质层，并且在所述第二开口内，所述第二电介质层位于所述第一散热片的顶部并且邻近所述第一对电介质间隔件的暴露的侧壁，并且在所述第二栅极的顶部 氧化物并且与第二对电介质间隔物的暴露的侧壁相邻。

    Structure and method of Tinv scaling for high κ metal gate technology
    3.
    发明授权
    Structure and method of Tinv scaling for high κ metal gate technology 失效
    用于高kappa金属栅极技术的Tinv缩放的结构和方法

    公开(公告)号：US08643115B2

    公开(公告)日：2014-02-04

    申请号：US13006642

    申请日：2011-01-14

    申请人： Michael P. Chudzik ,  Dechao Guo ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Carl J. Radens ,  Shahab Siddiqui

    发明人： Michael P. Chudzik ,  Dechao Guo ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Carl J. Radens ,  Shahab Siddiqui

    IPC分类号： H01L27/092

    CPC分类号： H01L21/28008 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/092

    摘要： A complementary metal oxide semiconductor (CMOS) structure including a scaled n-channel field effect transistor (nFET) and a scaled p-channel field transistor (pFET) which do not exhibit an increased threshold voltage and reduced mobility during operation is provided Such a structure is provided by forming a plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion within an nFET gate stack, and forming at least a pFET threshold voltage adjusted high k gate dielectric layer portion within a pFET gate stack. In some embodiments, the pFET threshold voltage adjusted high k gate dielectric layer portion in the pFET gate stack is also plasma nitrided. The plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N2 and an nFET threshold voltage adjusted species located therein, while the plasma nitrided, pFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N2 and a pFET threshold voltage adjusted species located therein.

    摘要翻译： 提供了包括缩放的n沟道场效应晶体管（nFET）和在操作期间不呈现增加的阈值电压和降低的迁移率的缩放的p沟道场效应晶体管（pFET）的互补金属氧化物半导体（CMOS）结构。这种结构 通过在nFET栅极堆叠内形成等离子体氮化的nFET阈值电压调整的高k栅极电介质层部分，并且在pFET栅极堆叠内形成至少pFET阈值电压调整的高k栅介质层部分。 在一些实施例中，pFET栅极堆叠中的pFET阈值电压调节的高k栅介质层部分也是等离子体氮化的。 等离子体氮化的nFET阈值电压调节的高k栅极电介质层部分包括高达15原子％的N 2和位于其中的nFET阈值电压调节的物质，而等离子体氮化pFET阈值电压调节的高k栅介质层部分包括多达15个 原子％N2和位于其中的pFET阈值电压调节物质。

    STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY
    4.
    发明申请
    STRUCTURE AND METHOD OF Tinv SCALING FOR HIGH k METAL GATE TECHNOLOGY 失效
    高k金属门技术的镀层结构与方法

    公开(公告)号：US20120181616A1

    公开(公告)日：2012-07-19

    申请号：US13006642

    申请日：2011-01-14

    申请人： Michael P. Chudzik ,  Dechao Guo ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Carl J. Radens ,  Shahab Siddiqui

    发明人： Michael P. Chudzik ,  Dechao Guo ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Carl J. Radens ,  Shahab Siddiqui

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L21/28008 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/092

    摘要： A complementary metal oxide semiconductor (CMOS) structure including a scaled n-channel field effect transistor (nFET) and a scaled p-channel field transistor (pFET) which do not exhibit an increased threshold voltage and reduced mobility during operation is provided Such a structure is provided by forming a plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion within an nFET gate stack, and forming at least a pFET threshold voltage adjusted high k gate dielectric layer portion within a pFET gate stack. In some embodiments, the pFET threshold voltage adjusted high k gate dielectric layer portion in the pFET gate stack is also plasma nitrided. The plasma nitrided, nFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N2 and an nFET threshold voltage adjusted species located therein, while the plasma nitrided, pFET threshold voltage adjusted high k gate dielectric layer portion includes up to 15 atomic % N2 and a pFET threshold voltage adjusted species located therein.

    摘要翻译： 提供了包括缩放的n沟道场效应晶体管（nFET）和在操作期间不呈现增加的阈值电压和降低的迁移率的缩放的p沟道场效应晶体管（pFET）的互补金属氧化物半导体（CMOS）结构。这种结构 通过在nFET栅极堆叠内形成等离子体氮化的nFET阈值电压调整的高k栅极电介质层部分，并且在pFET栅极堆叠内形成至少pFET阈值电压调整的高k栅介质层部分。 在一些实施例中，pFET栅极堆叠中的pFET阈值电压调节的高k栅介质层部分也是等离子体氮化的。 等离子体氮化的nFET阈值电压调节的高k栅介质层部分包括高达15原子％的N 2和位于其中的nFET阈值电压调节的物质，而等离子体氮化的pFET阈值电压调节的高k栅介质层部分包括多达15个 原子％N2和位于其中的pFET阈值电压调节物质。

    Replacement Gate Devices With Barrier Metal For Simultaneous Processing
    7.
    发明申请
    Replacement Gate Devices With Barrier Metal For Simultaneous Processing 失效
    具有阻隔金属的替代门装置用于同时处理

    公开(公告)号：US20120139053A1

    公开(公告)日：2012-06-07

    申请号：US12960586

    申请日：2010-12-06

    申请人： Takashi Ando ,  Michael P. Chudzik ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Vijay Narayanan

    发明人： Takashi Ando ,  Michael P. Chudzik ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Vijay Narayanan

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L21/823842 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7848

    摘要： A method of simultaneously fabricating n-type and p type field effect transistors can include forming a first replacement gate having a first gate metal layer adjacent a gate dielectric layer in a first opening in a dielectric region overlying a first active semiconductor region. A second replacement gate including a second gate metal layer can be formed adjacent a gate dielectric layer in a second opening in a dielectric region overlying a second active semiconductor region. At least portions of the first and second gate metal layers can be stacked in a direction of their thicknesses and separated from each other by at least a barrier metal layer. The NFET resulting from the method can include the first active semiconductor region, the source/drain regions therein and the first replacement gate, and the PFET resulting from the method can include the second active semiconductor region, source/drain regions therein and the second replacement gate.

    摘要翻译： 同时制造n型和p型场效应晶体管的方法可以包括在覆盖第一有源半导体区域的电介质区域中的第一开口中形成具有与栅极电介质层相邻的第一栅极金属层的第一替代栅极。 包括第二栅极金属层的第二替代栅极可以在覆盖在第二有源半导体区域上的电介质区域中的第二开口中邻近栅极电介质层形成。 第一和第二栅极金属层的至少一部分可以沿其厚度的方向堆叠并且通过至少阻挡金属层彼此分离。 由该方法产生的NFET可以包括第一有源半导体区域，其中的源极/漏极区域和第一替换栅极，并且由该方法产生的PFET可以包括第二有源半导体区域，其中的源/漏区域和第二替换 门。

    Replacement gate devices with barrier metal for simultaneous processing
    9.
    发明授权
    Replacement gate devices with barrier metal for simultaneous processing 失效
    具有隔离金属的替换门装置用于同时处理

    公开(公告)号：US08420473B2

    公开(公告)日：2013-04-16

    申请号：US12960586

    申请日：2010-12-06

    申请人： Takashi Ando ,  Michael P. Chudzik ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Vijay Narayanan

    发明人： Takashi Ando ,  Michael P. Chudzik ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Vijay Narayanan

    IPC分类号： H01L21/8238 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L21/823842 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7848

    摘要： A method of simultaneously fabricating n-type and p type field effect transistors can include forming a first replacement gate having a first gate metal layer adjacent a gate dielectric layer in a first opening in a dielectric region overlying a first active semiconductor region. A second replacement gate including a second gate metal layer can be formed adjacent a gate dielectric layer in a second opening in a dielectric region overlying a second active semiconductor region. At least portions of the first and second gate metal layers can be stacked in a direction of their thicknesses and separated from each other by at least a barrier metal layer. The NFET resulting from the method can include the first active semiconductor region, the source/drain regions therein and the first replacement gate, and the PFET resulting from the method can include the second active semiconductor region, source/drain regions therein and the second replacement gate.

    摘要翻译： 同时制造n型和p型场效应晶体管的方法可以包括在覆盖第一有源半导体区域的电介质区域中的第一开口中形成具有与栅极电介质层相邻的第一栅极金属层的第一替代栅极。 包括第二栅极金属层的第二替代栅极可以在覆盖在第二有源半导体区域上的电介质区域中的第二开口中邻近栅极电介质层形成。 第一和第二栅极金属层的至少一部分可以沿其厚度的方向堆叠并且通过至少阻挡金属层彼此分离。 由该方法产生的NFET可以包括第一有源半导体区域，其中的源极/漏极区域和第一替换栅极，并且由该方法产生的PFET可以包括第二有源半导体区域，其中的源/漏区域和第二替换 门。

    REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT
    10.
    发明申请
    REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT 有权
    具有降低闸门泄漏电流的更换门

    公开(公告)号：US20120181630A1

    公开(公告)日：2012-07-19

    申请号：US13006656

    申请日：2011-01-14

    申请人： Takashi Ando ,  Michael P. Chudzik ,  Rishikesh Krishnan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Keith Kwong Hon Wong

    发明人： Takashi Ando ,  Michael P. Chudzik ,  Rishikesh Krishnan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Keith Kwong Hon Wong

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L21/28008 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7833 ,  H01L29/7843

    摘要： Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a gate dielectric layer is formed in a gate cavity. A metallic compound layer including a metal and a non-metal element is deposited directly on the gate dielectric layer. At least one barrier layer and a conductive material layer is deposited and planarized to fill the gate cavity. The metallic compound layer includes a material having a work function about 4.4 eV or less, and can include a material selected from tantalum carbide and a hafnium-silicon alloy. Thus, the metallic compound layer can provide a work function that enhances the performance of an n-type field effect transistor employing a silicon channel.

    摘要翻译： 提供了替代栅极工作功能材料堆叠，其提供关于硅导带的能级的功函数。 在去除一次性栅极堆叠之后，在栅极腔中形成栅极电介质层。 包括金属和非金属元素的金属化合物层直接沉积在栅极介电层上。 沉积至少一个势垒层和导电材料层并平坦化以填充栅极腔。 金属化合物层包括功函数约4.4eV或更低的材料，并且可以包括选自碳化钽和铪硅合金的材料。 因此，金属化合物层可以提供增强采用硅通道的n型场效应晶体管的性能的功函数。