发明授权
US08941188B2 Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
有权
具有超结晶体管的半导体装置和集成在公共半导体本体中的另一器件
- 专利标题： Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
- 专利标题（中）： 具有超结晶体管的半导体装置和集成在公共半导体本体中的另一器件
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申请号： US13429568申请日： 2012-03-26
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公开(公告)号： US08941188B2公开(公告)日： 2015-01-27
- 发明人: Armin Willmeroth , Franz Hirler , Peter Irsigler
- 申请人： Armin Willmeroth , Franz Hirler , Peter Irsigler
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/336 ; H01L29/78 ; H01L29/88 ; H01L29/732 ; H01L29/739 ; H01L29/778 ; H01L29/792 ; H01L21/8234 ; H01L27/082 ; H01L27/108
摘要：
A semiconductor arrangement includes a semiconductor body and a power transistor arranged in a first device region of the semiconductor body. The power transistor includes at least one source region, a drain region, and at least one body region, at least one drift region of a first doping type and at least one compensation region of a second doping complementary to the first doping type, and a gate electrode arranged adjacent to the at least one body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement also includes a further semiconductor device arranged in a second device region of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The further semiconductor device includes device regions arranged in the first semiconductor region.
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