Invention Grant
US08946069B2 Fabricating method of semiconductor device and semiconductor device fabricated using the same method 有权
使用相同方法制造的半导体器件和半导体器件的制造方法

Fabricating method of semiconductor device and semiconductor device fabricated using the same method
Abstract:
A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.
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