Invention Grant
US08946069B2 Fabricating method of semiconductor device and semiconductor device fabricated using the same method
有权
使用相同方法制造的半导体器件和半导体器件的制造方法
- Patent Title: Fabricating method of semiconductor device and semiconductor device fabricated using the same method
- Patent Title (中): 使用相同方法制造的半导体器件和半导体器件的制造方法
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Application No.: US14138721Application Date: 2013-12-23
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Publication No.: US08946069B2Publication Date: 2015-02-03
- Inventor: Jin-Wook Lee , Myeong-Cheol Kim , Sang-Min Lee , Young-Ju Park , Hyung-Yong Kim , Myung-Hoon Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co. Ltd.
- Current Assignee: Samsung Electronics Co. Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0095926 20101001
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/265 ; H01L21/306 ; H01L21/3065 ; H01L21/8234 ; H01L21/8238 ; H01L29/78

Abstract:
A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.
Public/Granted literature
- US20140110757A1 FABRICATING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME METHOD Public/Granted day:2014-04-24
Information query
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