发明授权
US08951819B2 Wafer dicing using hybrid split-beam laser scribing process with plasma etch
有权
使用等离子体蚀刻的混合分束激光划线工艺进行晶片切割
- 专利标题： Wafer dicing using hybrid split-beam laser scribing process with plasma etch
- 专利标题（中）： 使用等离子体蚀刻的混合分束激光划线工艺进行晶片切割
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申请号： US13180021申请日： 2011-07-11
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公开(公告)号： US08951819B2公开(公告)日： 2015-02-10
- 发明人: Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , Aparna Iyer
- 申请人： Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , Aparna Iyer
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor Zafman LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; B23K26/00 ; H01L21/3065 ; H01L21/78 ; H01L21/67
摘要：
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a split-beam laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
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