Invention Grant
- Patent Title: Method for fabricating sensor
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Application No.: US14127353Application Date: 2012-11-16
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Publication No.: US08951822B2Publication Date: 2015-02-10
- Inventor: Shaoying Xu , Zhenyu Xie , Xu Chen
- Applicant: Beijing Boe Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
- Current Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201210262962 20120726
- International Application: PCT/CN2012/084771 WO 20121116
- International Announcement: WO2014/015582 WO 20140130
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146

Abstract:
A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a pattern of a photodiode, and a pattern of a transparent electrode disposed by using a first patterning process; forming a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer by using a third patterning process; forming a pattern of a gate insulating layer by using a fourth patterning process, wherein the gate insulating layer has a via hole above the transparent electrode; and forming a pattern of a gate electrode, a pattern of a gate line, and a pattern of a bias line connected to the transparent electrode via the via hole above the transparent electrode by using a fifth patterning process.
Public/Granted literature
- US09048161B2 Method for fabricating sensor Public/Granted day:2015-06-02
Information query
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