-
公开(公告)号：US09886122B2
公开(公告)日：2018-02-06
申请号：US14771522
申请日：2014-12-09
Inventor： Zhenyu Xie
IPC: G06F3/041 , G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/1362 , G06F3/044 , G02F1/1368
CPC classification number: G06F3/0416 , G02F1/13338 , G02F1/133514 , G02F1/134309 , G02F1/134336 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F2001/134318 , G02F2001/136295 , G02F2201/121 , G06F3/041 , G06F3/0412 , G06F3/044
Abstract: The present disclosure provides an array substrate and a capacitive in-cell touch panel with the array substrate. The array substrate includes a common electrode layer which is partitioned into a plurality of touch driving electrodes and a plurality of common electrodes arranged alternately. Each touch driving electrode is configured to be applied with a common electrode signal and a touch scanning signal in a time-division manner. Each touch driving electrode includes a plurality of touch driving sub-electrodes spaced apart from each other in an extension direction of the touch driving electrode, and metal wires configured to connect the adjacent touch driving sub-electrodes.
-
公开(公告)号：US09735183B2
公开(公告)日：2017-08-15
申请号：US14550040
申请日：2014-11-21
Inventor： Shaoying Xu , Zhenyu Xie , Xu Chen
IPC: H04L27/12 , H01L27/12 , H01L31/18 , H01L31/14 , H01L29/49 , H01L29/417 , H01L27/146
CPC classification number: H01L27/1259 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/14658 , H01L29/41733 , H01L29/4908 , H01L31/145 , H01L31/18
Abstract: A method of manufacturing a thin film transistor flat sensor that includes depositing a first metal film on a substrate and forming a common electrode on the substrate with one patterning process; successively depositing an insulating film and a second metal film on the substrate having the common electrode formed thereon, and forming a gate electrode by applying one pattering process to the second metal film; applying one patterning process to the deposited insulating film to form a common electrode insulating layer, wherein a first via hole is formed in the common electrode insulating layer at a location corresponding to the common electrode; depositing a transparent conductive film on the substrate having the common electrode, and forming a first conductive film layer, acting as one polar plate of a storage capacitor, on the common electrode and the gate electrode with one patterning process.
-
公开(公告)号：US09360702B2
公开(公告)日：2016-06-07
申请号：US14355273
申请日：2013-12-03
Inventor： Jing Li , Zhenyu Xie , Xu Chen , Da Xu
IPC: G02F1/1335 , G02F1/1368 , G02F1/1362 , G02F1/1334 , G02F1/1343
CPC classification number: G02F1/133555 , G02F1/1334 , G02F1/133553 , G02F1/13439 , G02F1/1362 , G02F1/136286 , G02F1/1368
Abstract: An array substrate and a transflective liquid crystal display panel. The array substrate includes: a plurality of sub-pixel areas defined by gate lines and data lines distributed across each other, each of the sub-pixel areas comprising a transmission area and a reflection area, wherein, the array substrate further comprises an adjustment module; the adjustment module is configured to transmit an adjustment signal to the reflection area and adjust the reflection area from opaque state to transparent state upon an external light intensity being smaller than a preset light intensity.
Abstract translation: 阵列基板和透反射液晶显示面板。 阵列基板包括：由彼此分布的栅极线和数据线限定的多个子像素区域，每个子像素区域包括透射区域和反射区域，其中阵列基板还包括调整模块 ; 调整模块被配置为在外部光强度小于预设光强度时将调整信号发送到反射区域并将反射区域从不透明状态调整到透明状态。
-
4.发明授权Oxide semiconductor thin film transistor, manufacturing method, and display device thereof 有权氧化物半导体薄膜晶体管，制造方法及其显示装置公开(公告)号：US08987074B2
公开(公告)日：2015-03-24
申请号：US13983868
申请日：2013-02-27
Inventor： Zhenyu Xie , Shaoying Xu , Changjiang Yan , Tiansheng Li
CPC classification number: H01L29/7869 , H01L23/564 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
Abstract: An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.
Abstract translation: 公开了一种氧化物半导体薄膜晶体管，其制造方法和显示装置。 一种氧化物半导体薄膜晶体管，包括栅极绝缘层（22），氧化物半导体层（24）和阻挡层（25），其中第一过渡层（23）形成在栅极绝缘层（22）和 氧化物半导体层（24）中，第一过渡层（23）的氧含量高于氧化物半导体层（24）的氧含量。 氧化物半导体薄膜晶体管增强了氧化物半导体层（24）和阻挡层（25）之间的界面特性和晶格匹配，以更好地提高薄膜晶体管的稳定性。
-
公开(公告)号：US08962371B2
公开(公告)日：2015-02-24
申请号：US14126490
申请日：2012-11-21
Inventor： Shaoying Xu , Zhenyu Xie , Xu Chen
IPC: H01L21/00 , H01L27/146
CPC classification number: H01L27/14692 , H01L27/14687 , H01L31/105
Abstract: A method for fabricating a sensor, comprises: forming, on a base substrate, a pattern of a data line (31), a pattern of a drain electrode (34), a pattern of a source electrode (33), a pattern of a receive electrode (39), a pattern of a photodiode (40) and a pattern of a transparent electrode (41); forming a pattern of an ohmic layer by using a first patterning process; forming a pattern of an active layer by using a second patterning process; forming a pattern of a gate insulating layer by using a third patterning process; and forming a pattern of a gate line (30), a pattern of a gate electrode (38) and a pattern of a bias electrode (42) by using a fourth patterning process. Such a method can reduce the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.
Abstract translation: 一种用于制造传感器的方法，包括：在基底基板上形成数据线（31）的图案，漏电极（34）的图案，源电极（33）的图案， 接收电极（39），光电二极管（40）的图案和透明电极（41）的图案。 通过使用第一图案化工艺形成欧姆层的图案; 通过使用第二图案化工艺形成有源层的图案; 通过使用第三图案化工艺形成栅极绝缘层的图案; 以及通过使用第四图案化工艺形成栅极线（30）的图案，栅极（38）的图案和偏置电极（42）的图案。 这种方法可以减少掩模的数量和生产成本，并且简化了生产过程，从而显着提高了生产能力和无缺陷率。
-
Patent Agency Ranking
公开(公告)号：US20150014751A1
公开(公告)日：2015-01-15
申请号：US14125830
申请日：2012-11-26
Inventor： Tiansheng Li , Shaoying Xu , Zhenyu Xie
IPC: H01L27/146
CPC classification number: H01L27/14612 , H01L27/14603 , H01L27/14632 , H01L27/1464 , H01L27/14658 , H01L27/14687 , H01L27/14689 , H01L27/14692
Abstract: A sensor and its fabrication method are provided. The sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line disposed on the base substrate; a transparent electrode disposed on the bias line and being electrically contacted with the bias line; a photodiode disposed on the transparent electrode; and a receiving electrode disposed on the photodiode; the TFT device is located above the photodiode. When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate. In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved.
Abstract translation: 提供传感器及其制造方法。 该传感器包括：基底基板，一组栅极线和一组布置为彼此交叉的数据线;以及多个感测元件，其排列成阵列并由栅极线组和数据线组限定， 每个感测元件包括薄膜晶体管（TFT）器件和光电二极管感测器件，其中所述光电二极管传感器器件包括：设置在所述基底衬底上的偏置线; 透明电极，设置在偏置线上并与偏置线电接触; 设置在所述透明电极上的光电二极管; 和设置在光电二极管上的接收电极; TFT器件位于光电二极管的上方。 当传感器工作时，光通过基底直接传输到光电二极管传感器装置上。 与常规技术相比，光损失大大降低，光吸收率比提高。
-
公开(公告)号：US10788907B2
公开(公告)日：2020-09-29
申请号：US15757935
申请日：2015-06-26
Inventor： Tiansheng Li , Zhenyu Xie
Abstract: The technical solution provides a touch display substrate, a fabrication method thereof, and a touch display device. The touch display substrate includes a conductive bridge (9) and a touch-control signal lead (7) formed over a base substrate (1). The touch-control signal lead (7) is in contact with a first surface portion of the conductive bridge (9). A passivation layer (2) is formed over the touch-control signal lead (7) and the conductive bridge (9). The passivation layer (2) includes a via-hole (3) to expose a second surface portion of the conductive bridge (9). A touch electrode (8) is formed over the passivation layer (2) and being connected to the conductive bridge (9). Through the via-hole (3), the touch electrode (8) is connected to the conductive bridge (9) and further connected to the touch-control signal lead (7).
-
公开(公告)号：US10204936B2
公开(公告)日：2019-02-12
申请号：US14405008
申请日：2013-11-20
Inventor： Tiansheng Li , Jian Guo , Zhenyu Xie
Abstract: An array substrate includes a display region and a Gate driver On Array (GOA) region. In the GOA region, a gate metal electrode, a gate insulating layer, an active layer, a transition layer, and a source-drain metal electrode are formed in sequence from bottom to top, and a via hole is provided penetrating the transition layer, the active layer and the gate insulating layer, the source-drain metal electrode is electrically connected to the gate metal electrode through the via hole; and at an edge of the via hole, there is formed an angle opening upward at edges of the transition layer and the active layer. There are further disclosed a manufacturing method of the array substrate and a display device provided with the array substrate.
-
公开(公告)号：US10186562B2
公开(公告)日：2019-01-22
申请号：US14415909
申请日：2014-05-29
Inventor： Zongmin Tian , Zhenyu Xie , Xu Chen
IPC: H01L27/32 , H01L51/05 , H01L29/66 , H01L29/45 , H01L29/786 , H01L29/16 , H01L51/00 , H01L51/56 , H01L51/52
Abstract: A thin film transistor, a method for manufacturing the thin film transistor, an array substrate comprising the thin film transistor and an organic light emitting display panel comprising the thin film transistor are provided. The thin film transistor at least comprising an active layer made of carbon nanotube material with semiconductor properties or graphene with semiconductor properties; further comprising a first conductive layer and a second conductive layer respectively located on upper and lower sides of the active layer and in contact with the active layer, the first conductive layer and the second conductive layer formed a secondary electron emitting layer with electron multiplication function. The thin film transistor is advantageous in its simple structure and simple manufacturing process.
-
10.发明授权公开(公告)号：US10043911B2
公开(公告)日：2018-08-07
申请号：US14361751
申请日：2013-12-12
Inventor： Changjiang Yan , Xiaowei Jiang , Xiaohui Jiang , Zhenyu Xie , Xu Chen
IPC: H01L29/786 , H01L29/417 , H01L29/45 , H01L27/12 , H01L29/66
Abstract: A thin film transistor (TFT), a method for fabricating the same, an array substrate and a display device are provided. The TFT includes a source electrode and a drain electrode, a semiconductor active layer, a gate insulating layer and a gate electrode. The TFT further includes a light-shielding layer between the source electrode and the drain electrode. The light-shielding layer separates the source electrode and the drain electrode, and the light-shielding layer is disposed on a light incident side of the semiconductor active layer and is used to prevent the incident light from irradiating on the semiconductor active layer.
-
-
-
-
-
-
-
-
-
Search Results
81
records
(took 0.027 seconds)
