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公开(公告)号：US09236518B2
公开(公告)日：2016-01-12
申请号：US14128833
申请日：2012-12-03
Inventor： Changjiang Yan , Zhenyu Xie , Shaoying Xu , Tiansheng Li
IPC: H01L29/04 , H01L31/105 , H01L27/146 , H01L27/12 , H01L29/66 , H01L29/786 , H01L31/0256
CPC classification number: H01L31/1055 , H01L27/1214 , H01L27/14603 , H01L27/14616 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L27/14692 , H01L29/66765 , H01L29/78669 , H01L31/0256
Abstract: A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element including a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes are positioned between the active layer and the gate electrode. The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.
Abstract translation: 提供了一种传感器及其制造方法，该传感器包括：基底基板，一组栅极线和一组布置为彼此交叉的数据线;以及多个感测元件，其排列成阵列并由 栅极线和数据线组，每个感测元件包括TFT器件和光电二极管感测器件，其中TFT器件的沟道区域被反转，并且源极和漏极电极位于有源层和栅电极之间。 该传感器减少了掩模的数量和生产成本，简化了生产过程，从而显着提高了生产能力和无缺陷率。
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公开(公告)号：US20150179689A1
公开(公告)日：2015-06-25
申请号：US14356004
申请日：2013-06-20
Inventor： Zhenyu Xie , Shaoying Xu , Tiansheng Li , Changjiang Yan
IPC: H01L27/144 , H01L31/0203 , H01L31/20 , H01L31/0216
CPC classification number: H01L27/1443 , G02F1/13318 , G02F1/133512 , G02F2001/133388 , H01L27/1446 , H01L29/78633 , H01L29/78678 , H01L31/0203 , H01L31/02164 , H01L31/202
Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The non-display area includes at least one light sensor each including a light blocking layer on a substrate and for blocking light emitted from a backlight source; an insulating layer on the light blocking layer; a amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light; an input electrode and an output electrode on the amorphous silicon layer and not contacting each other. The input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel. The output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit.
Abstract translation: 提供阵列基板，其制造方法和显示装置。 阵列基板包括显示区域和非显示区域。 非显示区域包括至少一个光传感器，每个光传感器包括在基板上的遮光层，并用于阻挡从背光源发射的光; 遮光层上的绝缘层; 在对应于遮光层的位置处的绝缘层上的非晶硅层，用于感测外部光; 非晶硅层上的输入电极和输出电极，并且彼此不接触。 输入电极和输出电极均接触非晶硅层，在输入电极和输出电极之间的非晶硅层的一部分形成导电通道。 输出电极与光电检测电路连接，用于将由导电通道产生的漏极电流输入光电检测电路。
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公开(公告)号：US09048161B2
公开(公告)日：2015-06-02
申请号：US14127353
申请日：2012-11-16
Inventor： Shaoying Xu , Zhenyu Xie , Xu Chen
IPC: H01L21/00 , H01L27/146
CPC classification number: H01L27/14683 , H01L27/14632 , H01L27/14658 , H01L27/14676 , H01L27/14687 , H01L27/14692
Abstract: A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a pattern of a photodiode, and a pattern of a transparent electrode disposed by using a first patterning process; forming a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer by using a third patterning process; forming a pattern of a gate insulating layer by using a fourth patterning process, wherein the gate insulating layer has a via hole above the transparent electrode; and forming a pattern of a gate electrode, a pattern of a gate line, and a pattern of a bias line connected to the transparent electrode via the via hole above the transparent electrode by using a fifth patterning process.
Abstract translation: 一种用于制造传感器的方法，包括：在基底基板上形成源电极和漏极的图案，数据线的图案，接收电极的图案，光电二极管的图案和图案 通过使用第一图案化工艺设置的透明电极; 通过使用第二图案化工艺形成欧姆层的图案; 通过使用第三图案化工艺形成有源层的图案; 通过使用第四图案化工艺形成栅极绝缘层的图案，其中所述栅极绝缘层在所述透明电极上方具有通孔; 以及通过使用第五图案化工艺，通过透明电极上方的通孔形成栅电极的图案，栅线的图案和与透明电极连接的图案的图案。
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公开(公告)号：US08951822B2
公开(公告)日：2015-02-10
申请号：US14127353
申请日：2012-11-16
Inventor： Shaoying Xu , Zhenyu Xie , Xu Chen
IPC: H01L21/00 , H01L27/146
Abstract: A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a pattern of a photodiode, and a pattern of a transparent electrode disposed by using a first patterning process; forming a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer by using a third patterning process; forming a pattern of a gate insulating layer by using a fourth patterning process, wherein the gate insulating layer has a via hole above the transparent electrode; and forming a pattern of a gate electrode, a pattern of a gate line, and a pattern of a bias line connected to the transparent electrode via the via hole above the transparent electrode by using a fifth patterning process.
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公开(公告)号：US09735183B2
公开(公告)日：2017-08-15
申请号：US14550040
申请日：2014-11-21
Inventor： Shaoying Xu , Zhenyu Xie , Xu Chen
IPC: H04L27/12 , H01L27/12 , H01L31/18 , H01L31/14 , H01L29/49 , H01L29/417 , H01L27/146
CPC classification number: H01L27/1259 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/14658 , H01L29/41733 , H01L29/4908 , H01L31/145 , H01L31/18
Abstract: A method of manufacturing a thin film transistor flat sensor that includes depositing a first metal film on a substrate and forming a common electrode on the substrate with one patterning process; successively depositing an insulating film and a second metal film on the substrate having the common electrode formed thereon, and forming a gate electrode by applying one pattering process to the second metal film; applying one patterning process to the deposited insulating film to form a common electrode insulating layer, wherein a first via hole is formed in the common electrode insulating layer at a location corresponding to the common electrode; depositing a transparent conductive film on the substrate having the common electrode, and forming a first conductive film layer, acting as one polar plate of a storage capacitor, on the common electrode and the gate electrode with one patterning process.
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Patent Agency Ranking
6.发明授权Oxide semiconductor thin film transistor, manufacturing method, and display device thereof 有权氧化物半导体薄膜晶体管，制造方法及其显示装置公开(公告)号：US08987074B2
公开(公告)日：2015-03-24
申请号：US13983868
申请日：2013-02-27
Inventor： Zhenyu Xie , Shaoying Xu , Changjiang Yan , Tiansheng Li
CPC classification number: H01L29/7869 , H01L23/564 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
Abstract: An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.
Abstract translation: 公开了一种氧化物半导体薄膜晶体管，其制造方法和显示装置。 一种氧化物半导体薄膜晶体管，包括栅极绝缘层（22），氧化物半导体层（24）和阻挡层（25），其中第一过渡层（23）形成在栅极绝缘层（22）和 氧化物半导体层（24）中，第一过渡层（23）的氧含量高于氧化物半导体层（24）的氧含量。 氧化物半导体薄膜晶体管增强了氧化物半导体层（24）和阻挡层（25）之间的界面特性和晶格匹配，以更好地提高薄膜晶体管的稳定性。
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公开(公告)号：US08962371B2
公开(公告)日：2015-02-24
申请号：US14126490
申请日：2012-11-21
Inventor： Shaoying Xu , Zhenyu Xie , Xu Chen
IPC: H01L21/00 , H01L27/146
CPC classification number: H01L27/14692 , H01L27/14687 , H01L31/105
Abstract: A method for fabricating a sensor, comprises: forming, on a base substrate, a pattern of a data line (31), a pattern of a drain electrode (34), a pattern of a source electrode (33), a pattern of a receive electrode (39), a pattern of a photodiode (40) and a pattern of a transparent electrode (41); forming a pattern of an ohmic layer by using a first patterning process; forming a pattern of an active layer by using a second patterning process; forming a pattern of a gate insulating layer by using a third patterning process; and forming a pattern of a gate line (30), a pattern of a gate electrode (38) and a pattern of a bias electrode (42) by using a fourth patterning process. Such a method can reduce the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.
Abstract translation: 一种用于制造传感器的方法，包括：在基底基板上形成数据线（31）的图案，漏电极（34）的图案，源电极（33）的图案， 接收电极（39），光电二极管（40）的图案和透明电极（41）的图案。 通过使用第一图案化工艺形成欧姆层的图案; 通过使用第二图案化工艺形成有源层的图案; 通过使用第三图案化工艺形成栅极绝缘层的图案; 以及通过使用第四图案化工艺形成栅极线（30）的图案，栅极（38）的图案和偏置电极（42）的图案。 这种方法可以减少掩模的数量和生产成本，并且简化了生产过程，从而显着提高了生产能力和无缺陷率。
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公开(公告)号：US20150014751A1
公开(公告)日：2015-01-15
申请号：US14125830
申请日：2012-11-26
Inventor： Tiansheng Li , Shaoying Xu , Zhenyu Xie
IPC: H01L27/146
CPC classification number: H01L27/14612 , H01L27/14603 , H01L27/14632 , H01L27/1464 , H01L27/14658 , H01L27/14687 , H01L27/14689 , H01L27/14692
Abstract: A sensor and its fabrication method are provided. The sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line disposed on the base substrate; a transparent electrode disposed on the bias line and being electrically contacted with the bias line; a photodiode disposed on the transparent electrode; and a receiving electrode disposed on the photodiode; the TFT device is located above the photodiode. When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate. In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved.
Abstract translation: 提供传感器及其制造方法。 该传感器包括：基底基板，一组栅极线和一组布置为彼此交叉的数据线;以及多个感测元件，其排列成阵列并由栅极线组和数据线组限定， 每个感测元件包括薄膜晶体管（TFT）器件和光电二极管感测器件，其中所述光电二极管传感器器件包括：设置在所述基底衬底上的偏置线; 透明电极，设置在偏置线上并与偏置线电接触; 设置在所述透明电极上的光电二极管; 和设置在光电二极管上的接收电极; TFT器件位于光电二极管的上方。 当传感器工作时，光通过基底直接传输到光电二极管传感器装置上。 与常规技术相比，光损失大大降低，光吸收率比提高。
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公开(公告)号：US09818605B2
公开(公告)日：2017-11-14
申请号：US14387390
申请日：2013-07-02
Inventor： Changjiang Yan , Tiansheng Li , Shaoying Xu , Zhenyu Xie , Xu Chen
CPC classification number: H01L21/02554 , H01L21/02472 , H01L21/02483 , H01L21/02565 , H01L21/02617 , H01L27/1225 , H01L29/66969 , H01L29/78693
Abstract: An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.
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公开(公告)号：US09741893B2
公开(公告)日：2017-08-22
申请号：US14357722
申请日：2013-08-23
Inventor： Zhenyu Xie , Xu Chen , Shaoying Xu
IPC: H01L21/00 , H01L31/18 , H01L27/146 , H01L27/144 , H01L31/0376
CPC classification number: H01L31/1804 , H01L27/1443 , H01L27/14603 , H01L27/14676 , H01L27/14687 , H01L27/14692 , H01L31/03762
Abstract: An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material. According to the technical solutions of the present disclosure, the fabricating procedure of an a-Si photoelectric device can be simplified, thereby improving the fabrication efficiency and reducing costs.
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