发明授权
US08951853B1 Method of forming semiconductor device using Si-H rich silicon nitride layer
有权
使用富Si硅氮化物层形成半导体器件的方法
- 专利标题: Method of forming semiconductor device using Si-H rich silicon nitride layer
- 专利标题(中): 使用富Si硅氮化物层形成半导体器件的方法
-
申请号: US12659474申请日: 2010-03-10
-
公开(公告)号: US08951853B1公开(公告)日: 2015-02-10
- 发明人: Pan-Kwi Park , Dong-Suk Shin , Yong-Kuk Jeong , Dong-Hyun Roh , Ha-Jin Lim
- 申请人: Pan-Kwi Park , Dong-Suk Shin , Yong-Kuk Jeong , Dong-Hyun Roh , Ha-Jin Lim
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si—H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.