Invention Grant
US08951894B2 Plasma treatment apparatus, method for forming film, and method for manufacturing thin film transistor
有权
等离子体处理装置,薄膜形成方法以及制造薄膜晶体管的方法
- Patent Title: Plasma treatment apparatus, method for forming film, and method for manufacturing thin film transistor
- Patent Title (中): 等离子体处理装置,薄膜形成方法以及制造薄膜晶体管的方法
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Application No.: US13618472Application Date: 2012-09-14
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Publication No.: US08951894B2Publication Date: 2015-02-10
- Inventor: Shunpei Yamazaki , Takayuki Inoue , Erumu Kikuchi , Hiroto Inoue
- Applicant: Shunpei Yamazaki , Takayuki Inoue , Erumu Kikuchi , Hiroto Inoue
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-146926 20090619
- Main IPC: H01L21/314
- IPC: H01L21/314 ; H01J37/32 ; H01L29/66

Abstract:
A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.
Public/Granted literature
- US20130012006A1 PLASMA TREATMENT APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR Public/Granted day:2013-01-10
Information query
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