公开(公告)号：US08951894B2

公开(公告)日：2015-02-10

申请号：US13618472

申请日：2012-09-14

申请人： Shunpei Yamazaki ,  Takayuki Inoue ,  Erumu Kikuchi ,  Hiroto Inoue

发明人： Shunpei Yamazaki ,  Takayuki Inoue ,  Erumu Kikuchi ,  Hiroto Inoue

IPC分类号： H01L21/314 ,  H01J37/32 ,  H01L29/66

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01J37/32541 ,  H01L29/66765

摘要： A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.

摘要翻译： 采用等离子体处理装置的结构，其中上电极具有设置有第一导入孔的突出部分和设置有第二导入孔的凹部，上电极的第一导入孔与填充有气体的第一圆筒连接， 不可能解离，第二引入孔连接到填充有可能解离的气体的第二气缸，不可能解离的气体从第一引入孔的引入口引入反应室 设置在上部电极的突出部分的表面上的引入孔和可能被解离的气体从设置在凹部的表面上的第二引入孔的引入口引入到反应室中。

公开(公告)号：US08895976B2

公开(公告)日：2014-11-25

申请号：US13164296

申请日：2011-06-20

申请人： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

发明人： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC分类号： H01L29/78 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/408

摘要： Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1

摘要翻译： 制造的是包括与氧化物半导体层的一部分重叠的氧化物半导体层，源极电极层和漏极电极层，与氧化物半导体层重叠的栅极绝缘层，源极电极层和漏极电极层的晶体管， 以及与所述氧化物半导体层的与氧化物半导体层的一部分重叠的栅电极，其间设置有栅极绝缘层，其中，在作为沟道形成区域的氧化物半导体层被照射光并停止光照射之后，弛豫时间 氧化物半导体层的光响应特性中的载流子具有至少两种模式：τ1和τ2，τ1<τ2，τ2为300秒以下。 此外，制造包括晶体管的半导体器件。

公开(公告)号：US08258025B2

公开(公告)日：2012-09-04

申请号：US12848594

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Yukie Suzuki ,  Yasuyuki Arai ,  Takayuki Inoue ,  Erumu Kikuchi

发明人： Shunpei Yamazaki ,  Yukie Suzuki ,  Yasuyuki Arai ,  Takayuki Inoue ,  Erumu Kikuchi

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02595 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.

摘要翻译： 制造具有高结晶度的微晶半导体膜。 此外，以高生产率制造具有优异的电特性和高可靠性的薄膜晶体管，以及包括薄膜晶体管的显示装置。 从设置在等离子体CVD装置的处理室中的多个突出部的电极引入含有硅或锗的沉积气体，通过供给高频电力而产生辉光放电，由此在基板上形成晶体粒子， 并且通过等离子体CVD法在晶体颗粒上形成微晶半导体膜。

公开(公告)号：US20110315979A1

公开(公告)日：2011-12-29

申请号：US13164296

申请日：2011-06-20

申请人： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

发明人： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC分类号： H01L29/78

CPC分类号： H01L29/7869 ,  H01L29/408

摘要： Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1

摘要翻译： 制造的是包括与氧化物半导体层的一部分重叠的氧化物半导体层，源极电极层和漏极电极层，与氧化物半导体层重叠的栅极绝缘层，源极电极层和漏极电极层的晶体管， 以及与所述氧化物半导体层的与氧化物半导体层的一部分重叠的栅电极，其间设置有栅极绝缘层，其中，在作为沟道形成区域的氧化物半导体层被照射光并停止光照射之后，弛豫时间 氧化物半导体层的光响应特性中的载流子具有至少两种模式：τ1和τ2，τ1<τ2，τ2为300秒以下。 此外，制造包括晶体管的半导体器件。

公开(公告)号：US20110227082A1

公开(公告)日：2011-09-22

申请号：US13048023

申请日：2011-03-15

申请人： Takayuki Inoue ,  Masashi Tsubuku ,  Suzunosuke Hiraishi ,  Junichiro Sakata ,  Erumu Kikuchi ,  Hiromichi Godo ,  Akiharu Miyanaga ,  Shunpei Yamazaki

发明人： Takayuki Inoue ,  Masashi Tsubuku ,  Suzunosuke Hiraishi ,  Junichiro Sakata ,  Erumu Kikuchi ,  Hiromichi Godo ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L31/032 ,  H01L31/18

摘要： An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ1 until which carriers are captured by the “safe” traps is large enough, there are two kinds of modes in photoresponse characteristics, that is, a region where the current value falls rapidly and a region where the current value falls gradually, in the result of a change in photoelectric current over time.

摘要翻译： “安全”陷阱存在的氧化物半导体层表现出光响应特性的两种模式。 通过使用氧化物半导体层，可以实现将光劣化抑制到最小并且电特性稳定的晶体管。 在光响应特性中表现出两种模式的氧化物半导体层具有1pA至10nA的光电流值。 当通过“安全”陷阱捕获载流子的平均时间τ1足够大时，光响应特性即电流值急剧下降的区域和电流值逐渐下降的区域有两种模式 在光电流随时间变化的结果中。

公开(公告)号：US08083956B2

公开(公告)日：2011-12-27

申请号：US12246947

申请日：2008-10-07

申请人： Gen Fujii ,  Erika Takahashi ,  Erumu Kikuchi ,  Sachiko Kawakami

发明人： Gen Fujii ,  Erika Takahashi ,  Erumu Kikuchi ,  Sachiko Kawakami

IPC分类号： H01L21/302

CPC分类号： H01L51/0004 ,  H01L27/3246 ,  H01L27/3283

摘要： To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.

摘要翻译： 提供具有更高图像质量和可靠性的显示设备或具有低成本且高生产率的大屏幕的大尺寸显示设备。 在显示装置中使用的功能层（例如着色层或像素电极层）通过将液体功能层形成材料排出到形成有包含第一有机化合物的层的开口而形成，该第一有机化合物具有C-N 键或作为碱的主链中的C-O键和包含第二有机化合物作为隔板的层。 控制附着在包含有机化合物的层的表面上对液体功能层形成材料具有疏液性的氟密度，从而可以选择性地形成疏液区域和亲液性区域。

公开(公告)号：US20120091444A1

公开(公告)日：2012-04-19

申请号：US13333304

申请日：2011-12-21

申请人： Gen Fujii ,  Erika Takahashi ,  Erumu Kikuchi ,  Sachiko Kawakami

发明人： Gen Fujii ,  Erika Takahashi ,  Erumu Kikuchi ,  Sachiko Kawakami

IPC分类号： H01L51/54

CPC分类号： H01L51/0004 ,  H01L27/3246 ,  H01L27/3283

摘要： To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.

摘要翻译： 提供具有更高图像质量和可靠性的显示设备或具有低成本且高生产率的大屏幕的大尺寸显示设备。 在显示装置中使用的功能层（例如着色层或像素电极层）通过将液体功能层形成材料排出到形成有包含第一有机化合物的层的开口而形成，该第一有机化合物具有C-N 键或作为碱的主链中的C-O键和包含第二有机化合物作为隔板的层。 控制附着在包含有机化合物的层的表面上对液体功能层形成材料具有疏液性的氟密度，从而可以选择性地形成疏液区域和亲液性区域。

公开(公告)号：US20090096364A1

公开(公告)日：2009-04-16

申请号：US12246947

申请日：2008-10-07

申请人： Gen Fujii ,  Erika Takahashi ,  Erumu Kikuchi ,  Sachiko Kawakami

发明人： Gen Fujii ,  Erika Takahashi ,  Erumu Kikuchi ,  Sachiko Kawakami

IPC分类号： H01J1/63 ,  H01L51/56

CPC分类号： H01L51/0004 ,  H01L27/3246 ,  H01L27/3283

摘要： To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.

摘要翻译： 提供具有更高图像质量和可靠性的显示设备或具有低成本且高生产率的大屏幕的大尺寸显示设备。 在显示装置中使用的功能层（例如着色层或像素电极层）通过将液体功能层形成材料排出到形成有包含具有CN键的第一有机化合物的层的开口而形成，或 作为基底的主链中的CO键和包含第二有机化合物作为分隔层的层。 控制附着在包含有机化合物的层的表面上对液体功能层形成材料具有疏液性的氟密度，从而可以选择性地形成疏液区域和亲液性区域。

公开(公告)号：US08847482B2

公开(公告)日：2014-09-30

申请号：US13333304

申请日：2011-12-21

申请人： Gen Fujii ,  Erika Takahashi ,  Erumu Kikuchi ,  Sachiko Kawakami

发明人： Gen Fujii ,  Erika Takahashi ,  Erumu Kikuchi ,  Sachiko Kawakami

IPC分类号： H01L51/00 ,  H01L27/32

CPC分类号： H01L51/0004 ,  H01L27/3246 ,  H01L27/3283

摘要： To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.

摘要翻译： 提供具有更高图像质量和可靠性的显示设备或具有低成本且高生产率的大屏幕的大尺寸显示设备。 在显示装置中使用的功能层（例如着色层或像素电极层）通过将液体功能层形成材料排出到形成有包含第一有机化合物的层的开口而形成，该第一有机化合物具有C-N 键或作为碱的主链中的C-O键和包含第二有机化合物作为隔板的层。 控制附着在包含有机化合物的层的表面上对液体功能层形成材料具有疏液性的氟密度，从而可以选择性地形成疏液区域和亲液性区域。