Invention Grant
- Patent Title: Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
- Patent Title (中): 固态成像装置，制造固态成像装置的方法和电子装置
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Application No.: US13050156Application Date: 2011-03-17
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Publication No.: US08952432B2Publication Date: 2015-02-10
- Inventor: Yusuke Oike , Takahiro Kawamura , Shinya Yamakawa , Ikuhiro Yamamura , Takashi Machida , Yasunori Sogoh , Naoki Saka
- Applicant: Yusuke Oike , Takahiro Kawamura , Shinya Yamakawa , Ikuhiro Yamamura , Takashi Machida , Yasunori Sogoh , Naoki Saka
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2010-083597 20100331
- Main IPC: H01L31/113
- IPC: H01L31/113 ; H01L27/146 ; H04N5/353 ; H04N5/3745 ; H04N5/363
Abstract:
Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.
Public/Granted literature
- US20110241079A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2011-10-06
Information query
IPC分类:
