Invention Grant
- Patent Title: Semiconductor devices and method of manufacturing the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13692012Application Date: 2012-12-03
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Publication No.: US08952452B2Publication Date: 2015-02-10
- Inventor: Hong-Seong Kang , Yoon-Hae Kim , Jong-Shik Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce P.L.C.
- Priority: KR10-2012-0028305 20120320
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/78 ; H01L29/40 ; H01L21/768 ; H01L29/49 ; H01L29/66 ; H01L21/8234 ; H01L29/417 ; H01L27/088
Abstract:
Semiconductor devices, and a method of manufacturing the same, include a gate insulating film pattern over a semiconductor substrate. A gate electrode is formed over the gate insulating film pattern. A spacer structure is formed on at least one side of the gate electrode and the gate insulating film pattern. The spacer structure includes a first insulating film spacer contacting the gate insulating film pattern, and a second insulating film spacer on an outer side of the first insulating film spacer. The semiconductor device has an air gap between the first insulating film spacer and the second insulating film spacer.
Public/Granted literature
- US20130248950A1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-09-26
Information query
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