发明授权
- 专利标题： Anti-reflection structure using surface plasmon and high-K dielectric material and method of manufacturing the anti-reflection structure
- 专利标题（中）： 使用表面等离子体和高K介电材料的防反射结构及其制造方法
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申请号： US13064290申请日： 2011-03-16
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公开(公告)号： US08953243B2公开(公告)日： 2015-02-10
- 发明人: Young-Jun Park , Jong-min Kim , Huamin Li , Won-Jong Yoo
- 申请人： Young-Jun Park , Jong-min Kim , Huamin Li , Won-Jong Yoo
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2010-0026817 20100325
- 主分类号： G02B1/10
- IPC分类号： G02B1/10 ; G02B5/00 ; B82Y30/00 ; G02B1/11
摘要：
An anti-reflection structure using surface plasmons and a high-k dielectric material, and a method of manufacturing the anti-reflection structure. The anti-reflection structure may include a high-k dielectric layer formed on a substrate, the high-k dielectric layer configured to allow incident light to pass therethrough, and a nano-material layer on the high-k dielectric layer. The high-k dielectric layer may include at least one of zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), tantalum oxide (Ta2O5), lanthanum oxide (La2O3), yttrium oxide (Y2O3) and aluminum oxide (Al2O3).
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