发明授权
- 专利标题: Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
- 专利标题(中): 具有垂直磁性层的侧面屏蔽磁阻(MR)读头
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申请号: US12799924申请日: 2010-05-05
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公开(公告)号: US08953285B2公开(公告)日: 2015-02-10
- 发明人: Yuchen Zhou , Kunliang Zhang , Zhigang Bai
- 申请人: Yuchen Zhou , Kunliang Zhang , Zhigang Bai
- 申请人地址: US CA Milpitas
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; B82Y10/00 ; B82Y25/00 ; G01R33/09 ; H01F10/30 ; H01F10/32 ; H01F41/30 ; B82Y40/00
摘要:
A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths
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