Invention Grant
- Patent Title: Photoresist and patterning process
- Patent Title (中): 光刻胶和图案化工艺
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Application No.: US12562761Application Date: 2009-09-18
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Publication No.: US08956806B2Publication Date: 2015-02-17
- Inventor: Chien-Wei Wang , Ching-Yu Chang , Burn Jeng Lin
- Applicant: Chien-Wei Wang , Ching-Yu Chang , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/038 ; G03F7/039 ; G03F7/20 ; G03F7/30
Abstract:
A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer.
Public/Granted literature
- US20110070542A1 PHOTORESIST AND PATTERNING PROCESS Public/Granted day:2011-03-24
Information query
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