Invention Grant
US08957415B2 Thin film transistor and thin film transistor array panel including the same
有权
薄膜晶体管和薄膜晶体管阵列面板包括它们
- Patent Title: Thin film transistor and thin film transistor array panel including the same
- Patent Title (中): 薄膜晶体管和薄膜晶体管阵列面板包括它们
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Application No.: US13664180Application Date: 2012-10-30
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Publication No.: US08957415B2Publication Date: 2015-02-17
- Inventor: Byung Du Ahn , Jun Hyung Lim , Jin Seong Park
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2012-0053720 20120521
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
A thin film transistor includes: a gate electrode on a substrate; a source electrode; a drain electrode positioned in a same layer as the source electrode and facing the source electrode; an oxide semiconductor layer positioned between the gate electrode and the source electrode or drain electrode; and a gate insulating layer positioned between the gate electrode and the source electrode or drain electrode. The oxide semiconductor layer includes titanium oxide (TiOx) doped with niobium (Nb).
Public/Granted literature
- US20130306965A1 THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME Public/Granted day:2013-11-21
Information query
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