公开(公告)号：US11417282B2

公开(公告)日：2022-08-16

申请号：US16782973

申请日：2020-02-05

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Joon Seok Park ,  Jun Hyung Lim ,  Jin Seong Park ,  Jiazhen Sheng ,  Tae Hyun Hong

IPC: H01L21/00 ,  G09G3/3291 ,  G09G3/3266 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L27/12

Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).

公开(公告)号：US11798498B2

公开(公告)日：2023-10-24

申请号：US17887901

申请日：2022-08-15

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Joon Seok Park ,  Jun Hyung Lim ,  Jin Seong Park ,  Jiazhen Sheng ,  Tae Hyun Hong

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L29/786 ,  H01L27/12 ,  H10K59/131 ,  H10K59/121 ,  H10K71/00 ,  H10K59/12 ,  H10K102/10

CPC classification number: G09G3/3291 ,  G09G3/3266 ,  H01L27/1225 ,  H01L29/7869 ,  H10K59/1213 ,  H10K59/131 ,  H10K71/00 ,  H10K59/1201 ,  H10K2102/102 ,  H10K2102/103

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

公开(公告)号：US20220398983A1

公开(公告)日：2022-12-15

申请号：US17887901

申请日：2022-08-15

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Joon Seok PARK ,  Jun Hyung Lim ,  Jin Seong Park ,  Jiazhen Sheng ,  Tae Hyun Hong

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L27/12

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

公开(公告)号：US08957415B2

公开(公告)日：2015-02-17

申请号：US13664180

申请日：2012-10-30

Applicant: Samsung Display Co., Ltd.

Inventor： Byung Du Ahn ,  Jun Hyung Lim ,  Jin Seong Park

IPC: H01L29/12

CPC classification number: H01L29/78693

Abstract: A thin film transistor includes: a gate electrode on a substrate; a source electrode; a drain electrode positioned in a same layer as the source electrode and facing the source electrode; an oxide semiconductor layer positioned between the gate electrode and the source electrode or drain electrode; and a gate insulating layer positioned between the gate electrode and the source electrode or drain electrode. The oxide semiconductor layer includes titanium oxide (TiOx) doped with niobium (Nb).

Abstract translation: 薄膜晶体管包括：衬底上的栅电极; 源电极; 位于与源电极相同的层并且面对源电极的漏电极; 位于所述栅电极和所述源电极或漏电极之间的氧化物半导体层; 以及位于栅电极和源电极或漏电极之间的栅极绝缘层。 氧化物半导体层包括掺杂有铌（Nb）的氧化钛（TiOx）。