发明授权
US08958239B2 Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit
有权
磁存储元件，磁存储器件，自旋晶体管和集成电路
- 专利标题： Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit
- 专利标题（中）： 磁存储元件，磁存储器件，自旋晶体管和集成电路
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申请号： US13532981申请日： 2012-06-26
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公开(公告)号： US08958239B2公开(公告)日： 2015-02-17
- 发明人: Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
- 申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-209986 20110926
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/16 ; H01L29/66 ; H01L43/08 ; H01L27/22 ; H01L29/06
摘要：
One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.