Invention Grant
- Patent Title: Hybrid polysilicon heterojunction back contact cell
- Patent Title (中): 混合多晶异质结接触电池
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Application No.: US14083141Application Date: 2013-11-18
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Publication No.: US08962373B2Publication Date: 2015-02-24
- Inventor: Peter J. Cousins , David D. Smith , Seung Bum Rim
- Applicant: Peter J. Cousins , David D. Smith , Seung Bum Rim
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0236 ; H01L31/0368 ; H01L31/0216 ; H01L31/068

Abstract:
A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
Public/Granted literature
- US20140080251A1 HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL Public/Granted day:2014-03-20
Information query
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