Invention Grant
US08963285B2 Semiconductor device and method of manufacturing thereof 有权
半导体装置及其制造方法

Semiconductor device and method of manufacturing thereof
Abstract:
A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.
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