Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13790117Application Date: 2013-03-08
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Publication No.: US08963285B2Publication Date: 2015-02-24
- Inventor: Winfried Bakalski , Anton Steltenpohl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L23/552 ; H01L29/40 ; H01L23/28 ; H01L21/78 ; H01L23/50 ; H01L23/538 ; H01L23/00

Abstract:
A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.
Public/Granted literature
- US20140252540A1 Semiconductor Device and Method of Manufacturing Thereof Public/Granted day:2014-09-11
Information query
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