公开(公告)号：US08963285B2

公开(公告)日：2015-02-24

申请号：US13790117

申请日：2013-03-08

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Anton Steltenpohl

IPC: H01L27/08 ,  H01L23/552 ,  H01L29/40 ,  H01L23/28 ,  H01L21/78 ,  H01L23/50 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L23/28 ,  H01L21/561 ,  H01L21/78 ,  H01L23/13 ,  H01L23/147 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/50 ,  H01L23/538 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2224/81 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.

Abstract translation: 半导体器件包括具有形成凹部的第一主表面的半导体衬底。 此外，半导体器件包括设置在凹部的底部的电互连结构。 半导体芯片位于凹槽中。 半导体芯片包括面向电互连结构的多个芯片电极。 此外，多个导电元件布置在电互连结构中并电连接到多个芯片电极。

公开(公告)号：US20230187298A1

公开(公告)日：2023-06-15

申请号：US18107800

申请日：2023-02-09

Applicant: Infineon Technologies AG

Inventor： Daniel Porwol ,  Thomas Fischer ,  Uwe Seidel ,  Anton Steltenpohl

IPC: H01L23/31

CPC classification number: H01L23/3164 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L21/6836 ,  H01L2924/10335

Abstract: A package includes: an electronic component that includes a dielectric layer as a base and a semiconductor die attached on top of the dielectric layer, the semiconductor die having an active area with monolithically integrated circuit elements; and an encapsulant encapsulating the dielectric layer and the semiconductor die. The encapsulant is a mold compound having different material properties than the dielectric layer. A method of manufacturing package is also described.

公开(公告)号：US20210335687A1

公开(公告)日：2021-10-28

申请号：US17237143

申请日：2021-04-22

Applicant: Infineon Technologies AG

Inventor： Daniel Porwol ,  Thomas Fischer ,  Uwe Seidel ,  Anton Steltenpohl

IPC: H01L23/31

Abstract: An electronic component includes a mold layer and a semiconductor die including a low ohmic first portion and a high ohmic second portion. The low ohmic first portion has an active area. The high ohmic second portion is arranged on the mold layer.

公开(公告)号：US20160329891A1

公开(公告)日：2016-11-10

申请号：US14705518

申请日：2015-05-06

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Anton Steltenpohl ,  Hans Taddiken

IPC: H03K17/687

CPC classification number: H03K17/693

Abstract: In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.

Abstract translation: 根据实施例，射频（RF）切换电路包括多个串联连接的RF开关单元，其包括负载路径和控制节点，耦合在相邻RF开关单元的控制节点之间的多个第一栅极电阻，以及 输入电阻器，其具有耦合到所述多个RF开关单元中的一个的控制节点的第一端，以及配置为所述开关驱动器的输出的第二端。 多个串联连接的RF开关单元中的每一个包括开关晶体管。

公开(公告)号：US20190013806A1

公开(公告)日：2019-01-10

申请号：US15644435

申请日：2017-07-07

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher ,  Anton Steltenpohl ,  Hans Taddiken ,  Danial Tayari

IPC: H03K17/16

CPC classification number: H03K17/162

Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

公开(公告)号：US09984917B2

公开(公告)日：2018-05-29

申请号：US14283242

申请日：2014-05-21

Applicant: Infineon Technologies AG

Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L21/265

CPC classification number: H01L21/76237 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26586 ,  H01L29/0607 ,  H01L29/0649

Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

公开(公告)号：US20180052479A1

公开(公告)日：2018-02-22

申请号：US15679263

申请日：2017-08-17

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Werner Simbuerger ,  Anton Steltenpohl ,  Hans Taddiken

IPC: G05F3/20 ,  H01L27/06 ,  H01L27/092 ,  H03G1/00 ,  H01L29/06 ,  H01L29/10

CPC classification number: G05F3/205 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0615 ,  H01L29/1029 ,  H03G1/0023 ,  H03G1/0029 ,  H03G1/007 ,  H03G1/0088

Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

公开(公告)号：US09742400B2

公开(公告)日：2017-08-22

申请号：US14705518

申请日：2015-05-06

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Anton Steltenpohl ,  Hans Taddiken

IPC: H03K17/693 ,  H03K17/687 ,  H03K17/16

CPC classification number: H03K17/693

Abstract: In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.

公开(公告)号：US11605572B2

公开(公告)日：2023-03-14

申请号：US17237143

申请日：2021-04-22

Applicant: Infineon Technologies AG

Inventor： Daniel Porwol ,  Thomas Fischer ,  Uwe Seidel ,  Anton Steltenpohl

IPC: H01L23/31 ,  H01L21/683 ,  H01L23/29 ,  H01L23/00

Abstract: An electronic component includes a mold layer and a semiconductor die including a low ohmic first portion and a high ohmic second portion. The low ohmic first portion has an active area. The high ohmic second portion is arranged on the mold layer.

公开(公告)号：US10804354B2

公开(公告)日：2020-10-13

申请号：US15933998

申请日：2018-03-23

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Martin Bartels ,  Andrea Cattaneo ,  Henning Feick ,  Christian Kuehn ,  Anton Steltenpohl

IPC: H01L23/66 ,  H01L49/02 ,  H01L27/06 ,  H01L23/522

Abstract: A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.