发明授权
- 专利标题: Atomic layer deposition apparatus
- 专利标题(中): 原子层沉积装置
-
申请号: US12649234申请日: 2009-12-29
-
公开(公告)号: US08968476B2公开(公告)日: 2015-03-03
- 发明人: In Chul Shin , Kyung Joon Kim
- 申请人: In Chul Shin , Kyung Joon Kim
- 申请人地址: KR Gyeonggi-Do
- 专利权人: K.C. Tech Co., Ltd.
- 当前专利权人: K.C. Tech Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Marger Johnson & McCollom
- 优先权: KR10-2008-0135963 20081229; KR10-2009-0047519 20090529
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; H01L21/687 ; C23C16/455 ; H01L21/677
摘要:
An atomic deposition apparatus is provided for simultaneously loading/unloading a plurality of substrates. The atomic deposition apparatus which may load/unload the plurality of substrates when transmitting the plurality of substrates to a process module, includes a loading/unloading module for loading/unloading a substrate, a process module including a plurality of process chambers for simultaneously receiving a plurality of substrates and performing a deposition process, each of the plurality of process chambers including a gas spraying unit having an exhaust portion by which an exhaust gas is drawn in from inside the process chamber and the drawn in gas is exhausted above the process chamber, and a transfer module including a transfer robot provided between the loading/unloading module and the process module, the transfer robot being adopted for simultaneously holding the plurality of substrates while transporting the substrate.
公开/授权文献
- US20100186669A1 ATOMIC LAYER DEPOSITION APPARATUS 公开/授权日:2010-07-29
信息查询
IPC分类: