发明授权
- 专利标题： High power RF circuit
- 专利标题（中）： 大功率射频电路
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申请号： US14041155申请日： 2013-09-30
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公开(公告)号： US08969733B1公开(公告)日： 2015-03-03
- 发明人: Chong Mei , Michael J. Len , Hans P. Ostergaard
- 申请人： Anaren, Inc.
- 申请人地址： US NY East Syracuse
- 专利权人： Anaren, Inc.
- 当前专利权人： Anaren, Inc.
- 当前专利权人地址： US NY East Syracuse
- 代理机构： Bond Schoeneck & King, PLLC
- 代理商 Daniel P. Malley
- 主分类号： H05K1/00
- IPC分类号： H05K1/00 ; H05K1/02 ; H01P3/06 ; H01L23/12
摘要：
The present invention is directed to an RF device that includes a ceramic layer characterized by a ceramic layer dielectric constant and includes an RF circuit arrangement having a predetermined geometry and predetermined electrical characteristics. The ceramic layer dissipates thermal energy generated by the RF circuit via substantially the entire ceramic surface area. A first dielectric layer comprises a thermoplastic material and has a predetermined first thickness and a first dielectric constant. The predetermined electrical characteristics of the RF circuit arrangement are a function of the ceramic layer dielectric constant. A relative softness of the thermoplastic material is a function of the RF device operating temperature.
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