Invention Grant
- Patent Title: Magnetic tunnel junction device
- Patent Title (中): 磁隧道连接装置
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Application No.: US14048704Application Date: 2013-10-08
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Publication No.: US08969984B2Publication Date: 2015-03-03
- Inventor: Xiaochun Zhu , Seung Hyuk Kang , Xia Li , Kangho Lee
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Donald D. Min
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/12 ; H01L43/10 ; H01L27/22
Abstract:
A magnetic tunnel junction device includes a Synthetic Anti-Ferromagnetic (SAF) layer, a first free layer, and second free layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers. The first free layer is magneto-statically coupled to the second free layer. A thickness of the spacer layer is at least 4 Angstroms.
Public/Granted literature
- US20140035075A1 MAGNETIC TUNNEL JUNCTION DEVICE Public/Granted day:2014-02-06
Information query
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