发明授权
- 专利标题: Backside structure and methods for BSI image sensors
- 专利标题(中): BSI图像传感器的背面结构和方法
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申请号: US14178084申请日: 2014-02-11
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公开(公告)号: US08969991B2公开(公告)日: 2015-03-03
- 发明人: Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L27/146 ; H01L31/0216 ; H01L31/18
摘要:
BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
公开/授权文献
- US20140159190A1 Backside Structure and Methods for BSI Image Sensors 公开/授权日:2014-06-12
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